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STD3NM50

N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh™ MOSFET

STMicroelectronics 

STD3NM50

STD3NM50-1

N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK

Zener-Protected MDmesh™ MOSFET

TYPE

VDSS

RDS(on)

ID

(@Tjmax)

STD3NM50

550V

<3Ω

3A

STD3NM50-1

550V

<3Ω

3A

s TYPICAL RDS(on) = 2.5 Ω

t(s) s HIGH dv/dt AND AVALANCHE CAPABILITIES

s IMPROVED ESD CAPABILITY

c s LOW INPUT CAPACITANCE AND GATE

du CHARGE

ro ) s LOW GATE INPUT RESISTANCE

P t(s s TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

lete duc DESCRIPTION

so ro The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

b P cess with the Company’s PowerMESH™ horizontal

- O te layout. The resulting product has an outstanding low

) le on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

t(s so Company’s proprietary strip technique yields overall

c b dynamic performance that is significantly better than

u that of similar completition’s products.

rod - O APPLICATIONS

P t(s) The MDmesh™ family is very suitable for increase

the power density of high voltage converters allow-

te c ing system miniaturization and higher efficiencies.

bsole Produ ABSOLUTE MAXIMUM RATINGS

O te Symbol

Parameter

le VGS

Gate- source Voltage

oID

Drain Current (continuous) at TC = 25°C

sID

Drain Current (continuous) at TC = 100°C

ObIDM (q) Drain Current (pulsed)

3

1

DPAK

TO-252

3

2

1

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

Value

Unit

±30

V

3

A

1.89

A

12

A

PTOT

Total Dissipation at TC = 25°C

46

W

VESD(G-S) Gate source ESD (HBM-C=100pF, R=15KΩ)

4

KV

Derating Factor

0.37

W/°C

dv/dt(1) Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)ISD< 3A, di/dt< 400A/µs, VDD< V(BR)DSS, TJ<TJMAX

February 2004

–65 to 150

150

°C

°C

1/10

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