BF1201 데이터 시트보기 (PDF) - Philips Electronics
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BF1201 Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1201; BF1201R;
BF1201WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s11
MAGNITUDE
(ratio)
0.987
0.985
0.978
0.976
0.949
0.928
0.905
0.882
0.860
0.838
0.818
ANGLE
(deg)
−4.72
−9.39
−18.59
−27.74
−36.59
−45.08
−53.26
−61.07
−68.48
−75.55
−82.23
s21
MAGNITUDE
(ratio)
2.775
2.774
2.731
2.671
2.599
2.501
2.400
2.297
2.199
2.096
1.997
ANGLE
(deg)
174.6
169.5
159.1
148.8
138.8
129.1
119.8
110.9
102.4
94.2
86.3
s12
MAGNITUDE
(ratio)
0.0006
0.0010
0.0019
0.0026
0.0032
0.0035
0.0035
0.0033
0.0029
0.0024
0.0021
ANGLE
(deg)
88.8
86.7
79.7
74.2
69.9
65.9
64.6
65.7
69.1
83.3
103.8
s22
MAGNITUDE
(ratio)
0.997
0.997
0.996
0.994
0.992
0.989
0.986
0.982
0.979
0.975
0.971
ANGLE
(deg)
−1.84
−3.37
−6.72
−10.02
−13.33
−16.55
−19.64
−22.63
−25.54
−28.44
−31.42
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
400
1
0.825
800
1.9
0.753
(deg)
38.93
70.65
Rn
(Ω)
50
38.75
2000 Mar 29
9
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