BSR15 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSR15 Datasheet PDF : 8 Pages
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NXP Semiconductors
PNP switching transistors
Product data sheet
BSR15; BSR16
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
collector cut-off current
BSR15
collector cut-off current
IE = 0; VCB = −50 V
−
IE = 0; VCB = −50 V; Tj = 150 °C
−
BSR16
IEBO
emitter cut-off current
hFE
DC current gain
BSR15
IE = 0; VCB = −50 V
−
IE = 0; VCB = −50 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
IC = −0.1 mA; VCE = −10 V
35
BSR16
75
DC current gain
BSR15
IC = −1 mA; VCE = −10 V
50
BSR16
100
DC current gain
BSR15
IC = −10 mA; VCE = −10 V
75
BSR16
100
DC current gain
DC current gain
BSR15
IC = −150 mA; VCE = −10 V; note 1
100
IC = −500 mA; VCE = −10 V; note 1
30
BSR16
50
VCEsat
VBEsat
Cc
Ce
fT
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
IC = −50 mA; VCE = −20 V; f = 100 MHz 200
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
−
IBoff = 15 mA
−
−
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−20
−20
−10
−10
−50
−
−
−
−
−
−
300
−
−
−400
−1.6
−1.3
−2.6
8
30
−
40
12
30
365
300
65
UNIT
nA
µA
nA
µA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
2004 Jan 13
4
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