IRFBC40APBF 데이터 시트보기 (PDF) - Vishay Semiconductors

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IRFBC40APBF

Power MOSFET

Vishay Semiconductors 

www.vishay.com

100000

10000

1000

100

VGS = 0 V,

Ciss = Cgs + Cgd, Cds

Crss = Cgd

Coss = Cds + Cgd

f = 1 MHz

SHORTED

Ciss

Coss

10

Crss

1

1

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

IRFBC40A, SiHFBC40A

Vishay Siliconix

100

10 TJ = 150 °C

1

TJ = 25 °C

0.1

0.4

VGS = 0 V

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 6.2 A

16

VDS = 480 V

VDS = 300 V

VDS = 120 V

12

8

4

For Test Circuit

See Fig. 13

0

0

8

16

24

32

40

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

100

OPERATING IN THIS AREA LIMITED

BY RDS(on)

10 µs

10

100 µs

1 ms

1

10 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10000

S16-0763-Rev. D, 02-May-16

4

Document Number: 91112

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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