IRF130 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF130 Datasheet PDF : 3 Pages
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IRF130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100 — — V
VGS = OV, ID= i.OmA
ABVoss/ATj Temperature Coefficient of Breakdown — 0.13 — v/°c Reference to 25°C, ID = 1 .OmA
RDS(on)
VGS(th)
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
— — 0.18
— — 0.21 Q
2.0 — 4.0 V
VGS = iov, ID = 9.0A®
VGS= 10V, Io=14A®
VDS = VGS,ID =250uA
gfs
Forward Transconductance
4.6 — — S<P)
VDS> 15V, lDS = 9.0A®
IDSS
Zero Gate Voltage Drain Current
— — 25
VDS=80V,VGS=OV
— — 250 uA
VDS = sov
VGS = OV,TJ= i25°c
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
—
— 100 nA
— — -100
vGS = 2ov
VGS = -2ov
Qg
Qgs
Qsd
td(on)
tr
•dfoff)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ('Miller') Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
12 — 35
2.5 — 10 nC
5.0 — 15
— — 35
— — 80
—
— 60 n s
VGS =10V, ID=14A
VDS = 5ov
VDD =sov, ID =i4A,
RG =7.sn
tf
LS + LD
Fall Time
Total Inductance
-— — 45
6.1
nH
Measured from drain lead (6mm/0.25in, from
package) to source lead (6mm/0.25in. from
package)
Qss
Input Capacitance
— 650
VGS = ov, VDS = 25V
CQSS
Output Capacitance
— 250 — pF
f = l.OMHz
Crss
Reverse Transfer Capacitance
— 44 —
Source-Drain Diode Ratings and Characteristics
Parameter
is Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) 3)
Min Typ Max Units
— — 14 A
56
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
ton Forward Turn-On Time
— — 1.5 V
— — 300 nS
— — 3.0 uC
Tj = 25°C, Is = 14A, VGS = OV ®
Tj = 25°C, IF = 14A, di/dt < lOOA/jis
VDD ^ sov ®
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + Lr>
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
Min Typ Max Units
—
—
—
—
1.67 °c/w
30
Test Conditions
Typical socket mount
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