BF620 데이터 시트보기 (PDF) - STMicroelectronics

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BF620

SMALL SIGNAL NPN TRANSISTOR

STMicroelectronics 

BF620

THERMAL DATA

Rthj-amb • Thermal Resistance Junction-Ambient

• Device mounted on a PCB area of 1 cm2

Max

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 200 V

VCB = 200 V

VCB = 300 V

Tj = 150 oC

IEBO

Emitter Cut-off Current

(IC = 0)

V(BR)CEO∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

VEB = 5 V

IC = 10 mA

IE = 100 µA

IC = 30 mA

IB = 5 mA

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 30 mA

IB = 5 mA

hFE∗ DC Current Gain

IC = 25 mA

VCE = 20 V

fT

Transition Frequency IC = 15 mA VCE = 10 V f =100 MHz

CRE Reverse Capacitance IC = 0

VCE = 30 V f = 1MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

Min.

300

5

50

60

Typ.

Max.

10

10

100

50

0.6

1.2

1.6

Unit

nA

µA

µA

nA

V

V

V

V

MHz

pF

2/4

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