75N75L-TF3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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75N75L-TF3-R

80A, 75V N-CHANNEL POWER MOSFET

Unisonic Technologies 

75N75

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

VDSS

75

V

VGSS

±20

V

Continuous Drain Current

TC = 25°C

ID

Pulsed Drain Current (Note 2)

IDM

80

A

320

A

Single Pulsed Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

EAS

dv/dt

700

mJ

12

V/ns

TO-220/TO-263

300

W

Power Dissipation

TO-220F/ TO-220F1

PD

48

W

TO-220F2

50

W

Junction Temperature

TJ

+175

°C

Storage Temperature

TSTG

-55 ~ +175

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. Starting TJ=25°C, ID=40A, VDD=37.5V

4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX

 THERMAL DATA

Junction to Ambient

Junction to Case

PARAMETER

TO-220/TO-263

TO-220F/ TO-220F1

TO-220F2

SYMBOL

θJA

θJC

RATINGS

62.5

0.5

2.6

2.5

UNIT

°C/W

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-097.F

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