MRF185(1997) 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF185
(Rev.:1997)

85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Advance Information

The RF MOSFET Line

RF POWER

Field-Effect Transistor

N–Channel Enhancement–Mode Lateral MOSFET

• High Gain, Rugged Device

• Broadband Performance from HF to 1 GHz

• Bottom Side Source Eliminates DC Isolators, Reducing Common

Mode Inductances

D

G

S

G

(FLANGE)

D

Order this document

by MRF185/D

MRF185

85 WATTS, 1.0 GHz

28 VOLTS

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 375B–02, STYLE 2

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Gate–Source Voltage

Storage Temperature Range

Operating Junction Temperature

Total Device Dissipation @ TC = 25°C

Derate above 25°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 1 mAdc)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

IDSS

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0 V)

IGSS

Symbol

VDSS

VGS

Tstg

TJ

PD

Symbol

RθJC

Min

65

–

–

Value

65

± 20

– 65 to +150

200

250

1.45

Max

0.7

Typ

Max

–

–

–

1

–

1

Unit

Vdc

Vdc

°C

°C

Watts

W/°C

Unit

°C/W

Unit

Vdc

µAdc

µAdc

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA

MRF185

1

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