PDTA124EEF 데이터 시트보기 (PDF) - Philips Electronics
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PDTA124EEF Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA124EEF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = −50 V
IB = 0; VCE = −30 V
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −5 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IC = −100 µA; VCE = −5 V
IC = −5 mA; VCE = −0.3 V
RR-----21--
resistor ratio
Cc
collector capacitance
IE = ie = 0; VCB = −10 V;
f = 1 MHz
MIN.
−
−
−
−
60
−
−
−2.5
15.4
TYP.
−
−
−
−
−
−
−1.14
−1.7
22
MAX.
−100
−1
−50
−180
−
−150
−0.8
−
28.6
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
0.8 1
1.2
−
−
3
pF
2001 Jun 11
3
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