STP7NB60FP_98 데이터 시트보기 (PDF) - STMicroelectronics
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STP7NB60FP_98 Datasheet PDF : 9 Pages
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STP7NB60/FP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
M ax
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.0
T O220-F P
3.13
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
7.2
580
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ . Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
Symb ol
V GS(th )
RDS( o n )
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source O n VGS = 10V ID = 3.6 A
Resistance
On Stat e Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
1.0
M a x.
5
1.2
Unit
V
Ω
7.2
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Ca pac i ta nc e
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.6 A
Min.
4
Typ .
5.3
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1250 1625 pF
165 223 pF
16
22
pF
2/9
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