2N3439CSM4(1998) 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc

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2N3439CSM4
(Rev.:1998)

HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

SEME

LAB

2N3439CSM4

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 50mA

350

ICEX*

Collector Cut-off Current (IC = 0)

IB = 0

VCE = 450V

ICBO*

Collector – Base Cut-off Current

IE = 0

TC = 125°C

VCB = 300V

IEBO*

Emitter Cut-off Current (IC = 0)

IC = 0

VEB = 6V (off)

VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA IB = 4mA

VBE(sat)* Base – Emitter Saturation Voltage

IC = 50mA IB = 4mA

hFE*

DC Current Gain

IC = 20mA IC = 10mA

40

* Pulse test tp = 300µs , δ ≤ 2%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

fT

Transition Frequency

IC = 10mA VCE = 10V f = 5MHz

15

Cob

Output Capacitance

VCB = 10V IE = 0

f = 1.0MHz

hfe

Small Signal Current Gain IC = 5mA VCE = 10V f = 1kHz

25

Typ.

Typ.

Max.

500

20

10

20

0.5

1.3

160

Unit

V

µA

µA

µA

µA

V

—

Max. Unit

MHz

10

pF

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/98

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