2N3439 데이터 시트보기 (PDF) - Comset Semiconductors
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2N3439 Datasheet PDF : 3 Pages
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NPN 2N3439 – 2N3440
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min
ICBO
ICEO
ICEX
IEBO
VCEO
hFE
VCE(SAT)
VBE(SAT)
fT
Collector Cutoff
Current
VCB = 360 V, IE = 0
VCB = 250 V, IE = 0
2N3439
2N3440
-
Collector Cutoff
Current
VCE = 300 V, IB = 0
VCE = 200 V, IB = 0
2N3439 -
2N3440 -
Collector Cutoff
Current
VCE = 450 V, VBE = -1.5 V 2N3439
VCE = 300 V, VBE = -1.5 V 2N3440
-
Emitter Cutoff
Current
VBE = 6 V, IC = 0
2N3439
2N3440
-
Collector-emitter
Breakdown Voltage
IC = 50 mA, IB = 0
2N3439 350
2N3440 250
DC Current Gain
IC = 2 mA, VCE = 10 V 2N3439 30
IC = 20 mA, VCE = 10 V
2N3439
2N3440
40
Collector-Emitter
saturation Voltage
IC = 50 mA, IB = 4 mA
-
Base-Emitter
saturation Voltage
IC = 50 mA, IB = 4 mA
-
Transition frequency
IC = 10 mA, VCB = 10 V
f = 5 MHz
15
Cob
Output Capacitance VCB = 10 V, f = 1MHz
-
Typ Max Unit
- 20 µA
-
-
20
50
µA
- 500 µA
- 20 µA
-
-
-
-
V
-
-
- 160 -
- 0.5 V
- 1.3 V
-
- MHz
- 10 pF
08/08/2012
COMSET SEMICONDUCTORS
2/3
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