FDP10N60ZU(2009) 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDP10N60ZU Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 10.0 V
20
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
5.0 V
Figure 2. Transfer Characteristics
30
20
25oC
10
150oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
1
10
20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
5
10 15 20 25 30
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
2500
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Ciss
1500
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
1
3
4
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.0
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 150V
8
VDS = 380V
VDS = 400V
6
4
2
* Note : ID = 10A
0
0
10
20
30
40
Qg, Total Gate Charge [nC]
FDP10N60ZU/FDPF10N60ZUT Rev. A
3
www.fairchildsemi.com
Share Link: 