26NM60N_13 데이터 시트보기 (PDF) - STMicroelectronics

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26NM60N_13

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package

STMicroelectronics 

STW26NM60N

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VDS Drain-source voltage

600

VGS Gate-source voltage

± 30

ID Drain current (continuous) at TC = 25 °C

20

ID Drain current (continuous) at TC = 100 °C

12.6

(1)

IDM

Drain current (pulsed)

80

PTOT Total dissipation at TC = 25 °C

140

Derating factor

1.12

(2)

dv/dt Peak diode recovery voltage slope

15

Tstg Storage temperature

–55 to 150

Tj Max. operating junction temperature

150

1. Pulse width limited by safe operating area.

2. ISD ≤ 20 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

0.89

50

Symbol

Table 4. Avalanche characteristics

Parameter

Value

Avalanche current, repetitive or not-

IAS repetitive (pulse width limited by Tjmax)

6

Single pulse avalanche energy

EAS

610

(starting TJ=25 °C, ID=IAS, VDD=50 V)

Unit

V

V

A

A

A

W

W/°C

V/ns

°C

°C

Unit

°C/W

°C/W

Unit

A

mJ

DocID025246 Rev 1

3/13

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