BC857C_ 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BC857C_ Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN general purpose Transistor
BC856/857/858
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC856
BC857
BC858
BC856
BC857
BC858
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-10mA,IB=B 0
Emitter-base breakdown voltage
V(BR)EBO IE=-1μA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
MIN TYP MAX UNIT
-80
-50
V
-30
-65
-45
V
-30
-5
V
-1 -15 nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
BC856A,857A,858A
BC856B,857B,858B hFE
BC857C,858C
Collector-emitter saturation voltage
VCE(sat)
125
VCE=-5V,IC=-2mA
220
420
IC=-100mA, IB=B -5mA
IC=-10mA, IB=B -0.5mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=B -5mA
-0.1 μA
250
475
800
-0.65
V
-0.3
-1.1 V
collector capacitance
Cc
VCB=-10V,IE=Ie=0
f=1MHz
4.5
pF
Transition frequency
fT
VCE=-5V, IC= -10mA 100
f=100MHz
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC044
Rev.A
www.galaxycn.com
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