D1407 데이터 시트보기 (PDF) - Inchange Semiconductor

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D1407

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A

VBE

Base-emitter voltage

IC=1A; VCE=5V

ICBO

Collector cut-off current

VCB=100V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

fT

Transition frequency

IC=1A; VCE=5V

COB

Collector output capacitance

f=1MHz ; VCB=10V;IE=0

‹ hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SD1407

MIN TYP. MAX UNIT

100

V

2.0

V

1.5

V

100 μA

1.0 mA

40

240

20

12

MHz

100

pF

2

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