MMBT5550LT3G 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT5550LT3G Datasheet PDF : 6 Pages
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MMBT5550L, MMBT5551L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBT5550
140
−
MMBT5551
160
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MMBT5550
160
−
MMBT5551
180
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)EBO
Vdc
6.0
−
MMBT5550
MMBT5551
MMBT5550
MMBT5551
ICBO
−
100
nAdc
−
50
−
100
mAdc
−
50
IEBO
nAdc
−
50
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
−
60
−
80
−
60
250
80
250
20
−
30
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
MMBT5550
MMBT5551
VCE(sat)
Vdc
−
0.15
−
0.25
−
0.20
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Vdc
Both Types
−
1.0
MMBT5550
−
1.2
MMBT5551
−
1.0
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
Both Types
ICES
nA
−
50
−
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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