STW57N65M5-4 데이터 시트보기 (PDF) - STMicroelectronics

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STW57N65M5-4

N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package

STMicroelectronics 

STW57N65M5-4

Electrical characteristics

Figure 8. Capacitance variations

C

AM14710v1

(pF)

10000

Ciss

1000

100

Coss

10

Crss

1

0.1

1

10

100 VDS(V)

Figure 9. Output capacitance stored energy

Eoss

(μJ)

18

16

AM14711v1

14

12

10

8

6

4

2

0

0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.10

ID=250μA

AM04972v1

1.00

0.90

0.80

0.70

-50 -25 0 25 50 75 100

TJ(°C)

Figure 11. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.1

1.9

1.7

ID= 21 A

VGS= 10 V

AM05501v2

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

TJ=-50°C

1.2

AM04974v1

1.0

0.8

0.6

TJ=150°C

0.4

TJ=25°C

0.2

0

0 10 20 30 40 50 ISD(A)

Figure 13. Normalized VDS vs temperature

VDS

(norm)

1.08

1.06

ID = 1mA

AM10399v1

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

DocID024559 Rev 2

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