2N3740 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N3740

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N3740 2N3741

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N3740

-60

V(BR)CEO

Collector-emitter

breakdown voltage

IC=-100mA ; IB=0

V

2N3741

-80

VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-125mA

-0.6

V

VBE

Base -emitter on voltage

IC=-0.25A ; VCE=-1V

ICEX

Collector

cut-off current

2N3740

2N3741

VCE=-60V;VBE(off)=-1.5V

VCE=-40V;VBE(off)=-1.5V;TC=150℃

VCE=80V;VBE(off)=1.5V

VCE=60V;VBE(off)=1.5V;TC=150℃

ICEO

Collector

cut-off current

2N3740 VCE=-40V; IB=0

2N3741 VCE=-60V; IB=0

-1.0

V

-0.1

-1.0

mA

-0.1

-1.0

-1.0 mA

ICBO

Collector

cut-off current

2N3740 VCB=-60V; IE=0

2N3741 VCB=-80V; IE=0

-0.1 mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-0.5 mA

hFE-1

DC current gain

IC=-0.1A ; VCE=-1V

40

hFE-2

DC current gain

IC=-0.25A ; VCE=-1V

30

100

hFE-3

DC current gain

IC=-0.5A ; VCE=-1V

20

hFE-4

DC current gain

IC=-1A ; VCE=-1V

10

fT

Transition frequency

IC=-0.1A ; VCE=-10V;f=1.0MHz

3.0

MHz

COB

Output capacitance

IE=0 ; VCB=-10V;f=100kHz

100 pF

2

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