BC849BLT1G(2010) 데이터 시트보기 (PDF) - ON Semiconductor
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BC849BLT1G Datasheet PDF : 13 Pages
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BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO
65
−
−
V
45
−
−
30
−
−
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 mA, VEB = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES
80
−
−
V
50
−
−
30
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO
80
−
−
V
50
−
−
30
−
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)EBO
6.0
−
−
V
6.0
−
−
5.0
−
−
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
15
nA
−
−
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
−
90
−
−
−
150
−
−
270
−
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
110
180
220
200
290
450
420
520
800
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
0.25
V
−
0.6
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VBE(sat)
−
0.7
−
V
−
0.9
−
VBE(on)
580
660
700
mV
−
−
770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
−
4.5
pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
dB
−
−
10
−
−
4.0
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