BUZ173 데이터 시트보기 (PDF) - Siemens AG

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BUZ173

SIPMOS® Power Transistor

Siemens AG 

BUZ 173

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = -200 V, VGS = 0 V, Tj = 25 °C

VDS = -200 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-Source on-resistance

VGS = -10 V, ID = -2.3 A

Symbol

min.

V(BR)DSS

-200

VGS(th)

-2.1

IDSS

-

-

IGSS

-

RDS(on)

-

Values

typ.

max.

-

-

-3

-4

-0.1

-1

-10

-100

-10

-100

1.2

1.5

Unit

V

µA

nA

Ω

Semiconductor Group

2

07/96

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