STP9N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STP9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD9N60M2, STP9N60M2, STU9N60M2

Electrical characteristics

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD Forward on voltage

ISD = 5.5 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 5.5 A, di/dt = 100 A/μs

-

VDD = 60 V (see Figure 18)

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 5.5 A, di/dt = 100 A/μs

VDD = 60 V, Tj = 150 °C

-

(see Figure 18)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

5.5 A

22 A

1.6 V

265

ns

1.65

μC

12.5

A

377

ns

2.3

μC

12.2

A

DocID024399 Rev 2

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