BSP19 데이터 시트보기 (PDF) - Philips Electronics

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BSP19

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BSP19; BSP20

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

Rth j-s

thermal resistance from junction to ambient

thermal resistance from junction to soldering point

note 1

104

K/W

23

K/W

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

Cc

fT

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

collector capacitance

transition frequency

IE = 0; VCE = 300 V

−

IC = 0; VEB = 5 V

−

VCE = 10 V; IC = 20 mA

40

IC = 50 mA; IB = 4 mA

−

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

VCE = 10 V; IC = 10 mA; f = 100 MHz 70

MAX.

20

100

−

0.5

2.5

−

UNIT

nA

nA

V

pF

MHz

1999 Jun 01

3

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