2SD1403 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1403

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=5A; IB=1A

VCB=800V; IE=0

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

Product Specification

2SD1403

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

10 μA

10 μA

8

3

MHz

2

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