2N5038 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2N5038 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5038/2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(sus)
Collector-emitter
sustaining voltage
2N5038
2N5039
VCEsat-1
Collector-emitter
saturation voltage
2N5038
2N5039
VCEsat-2
VBEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VBE
Base-emitter voltage
2N5038
2N5039
2N5038
ICEO
Collector cut-off current
2N5039
2N5038
ICEV
Collector cut-off current
2N5039
2N5038
IEBO
Emitter cut-off current
2N5039
hFE-1
DC current gain
hFE-2
DC current gain
2N5038
2N5039
Is/b
Second breakdown collector current
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
CONDITIONS
IC=0.2A ;IB=0
IC=12A ;IB=1.2A
IC=10A ;IB=1A
IC=20A ;IB=5A
IC=20A ;IB=5A
IC=12A ; VCE=5V
IC=10A ; VCE=5V
VCE=70V; IB=0
VCE=55V; IB=0
VCE=140V; VBE=-1.5V
VCE=100V ;TC=150℃
VCE=110V; VBE=-1.5V
VCE=85V ;TC=150℃
VEB=5V; IC=0
IC=2A ; VCE=5V
IC=12A ; VCE=5V
IC=10A ; VCE=5V
VCE=28V,
VCE=45V(t=1.0s Nonrepetitive)
MIN TYP MAX UNIT
90
V
75
1
V
2.5
V
3.3
V
1.8
V
20 mA
50
10
mA
50
10
5
mA
15
50
250
20
100
5
0.9
A
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;Vcc=30V
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
0.5 μs
1.5 μs
0.5 μs
JMnic
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