BC846AW 데이터 시트보기 (PDF) - Infineon Technologies

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BC846AW

NPN Silicon AF Transistors

Infineon Technologies 

BC846W...BC850W

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

Peak base current

Peak emitter current

Total power dissipation, TS = 124 °C

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point1)

Symbol

VCEO

VCBO

VCES

VEBO

IC

ICM

IBM

IEM

Ptot

Tj

Tstg

BC846W BC847W BC848W Unit

BC850W BC849W

65

45

30 V

80

50

30

80

50

30

6

6

5

100

mA

200

mA

200

200

250

mW

150

°C

-65 ... 150

RthJS

105

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10 mA, IB = 0

BC846W

65

-

BC847/850W

45

-

BC848/849W

30

-

V

-

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 10 µA, IE = 0

BC846W

80

-

-

BC847/850W

50

-

-

BC848/849W

30

-

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

Dec-11-2001

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