BU406D 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BU406D

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU406D BU407D

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

BU406D

BU407D

IC=100mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=0.65A

ICEV

Collector

cut-off current

BU406D VCE=400V; VBE=-1.5V

BU407D VCE=330V; VBE=-1.5V

IEBO

Emitter cut-off current

VEB=6.0V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

VF

Diode forward voltage

fT

Transition frequency

tf

Fall time

IF=5A

IC=0.5A ;VCE=10V;f=1.0MHz

IC=5A ;VCC=40V

IBend=0.65A

MIN TYP. MAX UNIT

200

V

150

1.0

V

1.3

V

15

mA

400

mA

15

1.5

V

10

MHz

0.75

µs

2

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