BFQ29P 데이터 시트보기 (PDF) - Infineon Technologies

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BFQ29P

NPN Silicon RF Transistor

Infineon Technologies 

BFQ 29P

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

AC Characteristics

Transition frequency

IC = 3 mA, VCE = 6 V, f = 200 MHz

IC = 20 mA, VCE = 6 V, f = 200 MHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Noise figure

IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω

IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 Ω

Power gain

IC = 20 mA, VCE = 6 V, f = 800 MHz,

Z0 = 50 Ω, ZL = ZLopt

Transducer gain

IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Ω

Linear output voltage

two-tone intermodulation test

IC = 20 mA, VCE = 6 V, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω

Third order intercept point

IC = 20 mA, VCE = 6 V, f = 800 MHz

Symbol

Values

Unit

min. typ. max.

fT

GHz

–

2.7 –

3.6 5

–

Ccb

–

0.5 0.65 pF

Cce

–

0.28 –

Cibo

–

1.35 –

Cobs

–

0.8 –

F

dB

–

0.9 1.2

–

1.5 –

Gpe

–

14 –

I S21e I 2 –

11 –

Vo1 = Vo2 –

180 –

mV

IP3

–

28 –

dBm

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