BC849BF 데이터 시트보기 (PDF) - Infineon Technologies

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BC849BF

NPN Silicon AF Transistors

Infineon Technologies 

BC846...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

fT

Ccb

Ceb

h11e

h12e

-

250

- MHz

- 0.95 - pF

-

9

-

kΩ

-

2.7

-

-

4.5

-

-

8.7

-

10-4

-

1.5

-

-

2

-

-

3

-

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h21e

-

200

-

-

330

-

-

600

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

h22e

µS

-

18

-

-

30

-

-

60

-

Noise figure

F

-

1.2

4 dB

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, BC849..., BC850...

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10 ... 50 Hz , BC850...

Vn

-

- 0.135 µV

6

2007-04-20

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