ES3DB 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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ES3DB Datasheet PDF : 3 Pages
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Production specification
Surface Mount Rectifiers
ES3AB--ES3JB
FEATURES
z Low cost
Pb
z Low leakage
Lead-free
z Low forward voltage drop
z High current capability
z Easily cleaned with Alcohol ,Isopropanol and similar solvents
z The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
z Case: DO-214AA molded plastic
z Terminals: Solder able per MIL- STD-202,Method 208
z Polarity: Color band denotes cathode
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@TA=100℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @TJ=125℃
Thermal Characteristics
VRRM
50
100
150
200
400
500
600
V
VRMS
35
70
105
140
280
350
420
V
VDC
50
100
150
200
400
500
600
V
IF(AV)
3.0
A
IFSM
100
A
Characteristic
Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS
Typical junction capacitance (Note2)
CJ
45
Typical thermal resistance (Note3)
RθJA
25
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
pF
℃/W
℃
℃
Characteristic
Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS
Maximum instantaneous forward voltage at3.0 A
VF
0.95
1.25
1.70
V
Maximum reverse current @TA=25℃
IR
at rated DC blocking voltage @TA=125℃
10
μA
500
Maximum reverse recovery time (Note1)
trr
35
ns
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A
2. Measured at 1.0MHZ and applied reverse voltage of 4.0VDC
3. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number: SMB103AA
www.gmicroelec.com
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