2SC4160N 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SC4160N

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

2SC4160

Continued from preceding page.

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

Conditions

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEX(sus)

ton

tstg

tf

VCE=10V, IC=0.4A

VCB=10V, f=1MHz

IC=2A, IB=0.4A

IC=2A, IB=0.4A

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=2A, IB1=0.2A, IB2=–0.8A, L=1mH, clamped

IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω,

VCC=200V

IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω,

VCC=200V

IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω,

VCC=200V

Ratings

min typ

20

50

500

400

7

400

max

0.8

1.5

Unit

MHz

pF

V

V

V

V

V

V

0.5 µs

2.5 µs

0.3 µs

Switching Time Test Circuit

PW=20µs

DC ≤1%

IB1

IB2

I NPUT

RB

VR

50Ω

+

100µF

VBE =-5V

OUTPUT

RL

+

470µF

VCC=200V

IC - VCE

5

500mA 450mA 400mA

4

3

2

1

350mA

300mA

250mA

200mA

150mA

100mA

50mA

0

IB= 0

0

2

4

6

8

10

Collector-to-Emitter Voltage, VCE – V

100

VCE = 5V

7

hFE - IC

5

Ta=120°C

25°C

3

2

-40°C

4

VCE = 5V

IC - VBE(on)

3

2

1

0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Base-to-Emitter Voltage, VBE(on) – V

1.0 IC / IB=5

VCE(sat) - IC

7

5

3

2

10

7

55 7 0.1

2 3 5 7 1.0

23

Collector Current, IC – A

5 7 10

0.1

7

5

5 7 0.1

23

5 7 1.0

23

Collector Current, IC – A

5 7 10

No.2481–2/4

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