2N6058 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2N6058

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2N6058 2N6059

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6058

2N6059

IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA

VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA

VBEsat Base-emitter saturation voltage

IC=12A ;IB=120mA

VBE

Base-emitter on voltage

IC=6A ; VCE=3V

2N6058 VCE=40V; IB=0

ICEO

Collector cut-off current

2N6059 VCE=50V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=6A ; VCE=3V

hFE-2

DC current gain

IC=12A ; VCE=3V

fT

Trainsistion frequency

IC=5A ;VCE=3V;f=1MHz

MIN

TYP. MAX UNIT

80

V

100

2.0

V

3.0

V

4.0

V

2.8

V

1.0

mA

2.0

mA

750

100

4

MHz

2

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