HAF1001 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

HAF1001

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability

Hitachi -> Renesas Electronics 

HAF1001

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS+

Gate to source voltage

VGSS –

Drain current

ID

Drain peak current

I Note1

D(pulse)

Body-drain diode reverse drain current IDR

Channel dissipation

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Typical Operation Characteristics

Ratings

–60

–16

3

–15

–30

–15

50

150

–55 to +150

Item

Input voltage

Input current

(Gate non shut down)

Input current

(Gate shut down)

Shut down temperature

Gate operation voltage

Symbol

VIH

VIL

I IH1

I IH2

I IL

I IH(sd)1

I IH(sd)2

Tsd

VOP

Min

–3.5

—

—

—

—

—

—

—

–3.5

Typ

—

—

—

—

—

–0.8

–0.35

175

—

Max

—

–1.2

–100

–50

–1

—

—

—

–13

Unit

V

V

µA

µA

µA

mA

mA

°C

V

Unit

V

V

V

A

A

A

W

°C

°C

Test Conditions

Vi = –8V, VDS = 0

Vi = –3.5V, VDS = 0

Vi = –1.2V, VDS = 0

Vi = –8V, VDS = 0

Vi = –3.5V, VDS = 0

Channel temperature

2

Share Link: