MGF0909A 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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MGF0909A Datasheet PDF : 3 Pages
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TYPICAL CHARACTERISTICS
6
VDS=3V
Ta=25˚C
ID vs. VGS
4
2
0
-3
-2
-1
0
GATE TO SOURCE VOLTAGE VGS(V)
PO & add vs. Pin
(f=2.3GHz)
40 VDS=10V
ID=1.3A
GP=11 10 9 dB
PO
30
50
40
ηadd
30
20
20
10
0
0
20
30
INPUT POWER Pin(dBm)
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
ID vs. VDS
6
VGS=-0.5V/Step
Ta=25˚C
4
VGS=0V
2
0
0
1
2
3
4
5
6
DRAIN TO SOURCE VOLTAGE VDS(V)
GLP,P1dB, ID and add vs. VDS
(f=2.3GHz)
13 ID=1.3A
12
11
10
39
37
GLP
P1dB
35
40
20
6
ηadd
8
10
VDS(V)
Nov. ´97
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