BD440 데이터 시트보기 (PDF) - Transys Electronics Limited
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BD440 Datasheet PDF : 3 Pages
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EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441
DC Current Gain
BD434 BD436 BD438 BD440 BD442
*hFE
IC=10mA, VCE=5V
>40 >40 >30 >20 >15
IC=500mA, VCE=1V >85 >85 >85 >40 >40
IC=2.0A, VCE=1V
>50 >50 >40 >25 >15
*hFE1 / hFE2
Current Gain Bandwidth
Product
Matched IC=500mA, VCE=1V ALL
Pairs
fT
IC=250mA, VCE=1V ALL
<1.4
>3.0
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
UNIT
MHz
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