MMBT5089LT1 데이터 시트보기 (PDF) - ON Semiconductor

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MMBT5089LT1

Low Noise Transistors

ON Semiconductor 

MMBT5088LT1 MMBT5089LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(IC = 100 µAdc, VCE = 5.0 Vdc)

MMBT5088

MMBT5089

hFE

300

400

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

MMBT5088

350

MMBT5089

450

(IC = 10 mAdc, VCE = 5.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)

Small Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)

MMBT5088

MMBT5089

MMBT5088

MMBT5089

MMBT5088

MMBT5089

300

400

VCE(sat)

—

VBE(sat)

—

fT

50

Ccb

—

Ceb

—

hfe

350

450

NF

—

—

Max

900

1200

—

—

—

—

0.5

0.8

—

4.0

10

1400

1800

3.0

2.0

Unit

—

Vdc

Vdc

MHz

pF

pF

—

dB

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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