HYB5117400BJ 데이터 시트보기 (PDF) - Infineon Technologies

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HYB5117400BJ

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)

Infineon Technologies 

HYB 5116(7)400BJ-50/-60

HYB 3116(7)400BJ/BT-50/-60

4M × 4 DRAM

The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized

as 4 194 304 words by 4-bits. The HYB 5(3)116(7)400BJ/BT utilizes a submicron CMOS silicon

gate process technology, as well as advanced circuit techniques to provide wide operating margins,

both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)400

to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width.

These packages provide high system bit densities and are compatible with commonly used

automatic testing and insertion equipment.

Ordering Information

Type

Ordering Code Package

2k-Refresh Versions

HYB 5117400BJ-50 Q67100-Q1086 P-SOJ-26/24-1 300 mil

HYB 5117400BJ-60 Q67100-Q1087 P-SOJ-26/24-1 300 mil

HYB 3117400BJ-50 on request

P-SOJ-26/24-1 300 mil

HYB 3117400BJ-60 on request

P-SOJ-26/24-1 300 mil

4k-Refresh Versions

HYB 5116400BJ-50 Q67100-Q1049 P-SOJ-26/24-1 300 mil

HYB 5116400BJ-60 Q67100-Q1050 P-SOJ-26/24-1 300 mil

HYB 3116400BJ-50 on request

P-SOJ-26/24-1 300 mil

HYB 3116400BJ-60 on request

P-SOJ-26/24-1 300 mil

HYB 3116400BT-50 on request

P-TSOPII-26/24-1 300 mil

HYB 3116400BT-60 on request

P-TSOPII-26/24-1 300 mil

Descriptions

5 V 50 ns FPM-DRAM

5 V 60 ns FPM-DRAM

3.3 V 50 ns FPM-DRAM

3.3 V 60 ns FPM-DRAM

5 V 50 ns FPM-DRAM

5 V 60 ns FPM-DRAM

3.3 V 50 ns FPM-DRAM

3.3 V 60 ns FPM-DRAM

3.3 V 50 ns FPM-DRAM

3.3 V 60 ns FPM-DRAM

Semiconductor Group

2

1998-10-01

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