3SK317 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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3SK317 Datasheet PDF : 8 Pages
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3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
Note: Marking is “ZR-”.
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-778 (Z)
1st. Edition
Mar. 1999
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