A1941B-O 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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A1941B-O Datasheet PDF : 3 Pages
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SEMICONDUCTOR
2SA1941B Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
V(BR)CEO
VCBO
VEBO
hFE1
hFE2
Collector cutoff current
VCBO = -140V, lE = 0
Emitter cutoff current
VEBO = -5V, lC = 0
Collector to emitter breakdown voltage lCEO = -50mA, IB = 0
Collector to base voltage
lCBO = -5 µA
Emitter to base voltage
lEBO = -5.0 µA
Forward current transfer ratio
(DC current gain)
VCE = -5V, IC = -1A
Rank-R
Rank-O
VCE = -5V, IC = -5A
MIN.
-140
-140
-5
55
80
35
VALUE
TYP.
83
MAX.
-5.0
-5.0
110
160
VCE(sat)
VBE
fT
Cob
Collector to emitter saturation voltage lC = -7A, IB = -0.7A
Base to emitter voltage
VCE = -5V, IC = -5A
Transition frequency
(Gain-Bandwidth product)
VCE = -5V, IC = -1A
Collector output capacitance
VCB = -10V, IE = 0, f = 1MHz
-0.8
-2.0
-1.0
-1.5
30
320
UNIT
µA
V
V
MHz
pF
ORDERING INFORMATION SCHEME
2SA 1941 B - R
Transistor series
PNP Type
Current & Voltage rating, IC & VCEO
-10A / -140V
Package type
B = TO-3PB
DC current gain rank, hFE1
R = 55 ~ 110
O = 80 ~ 160
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