SI3861DV 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3861DV Datasheet PDF : 5 Pages
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
150
R2 @ VIN = 4.5 V, R1 = 300 kW
120
90
IL = 1 A
VON/OFF = 3 V
Ci = 10 mF
Co = 1 mF
60
30
tf
td(off)
tr
td(on)
0
0
20
40
60
80
100
R2 (kW)
Si3861DV
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Dureation (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 150_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
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