SIHF840ASTR 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHF840ASTR

Power MOSFET

Vishay Semiconductors 

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

10

TJ = 150 ° C

1

4.5V

0.1

0.1

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

TJ = 25 ° C

1

0.1

4.0

V DS = 50V

20µs PULSE WIDTH

5.0

6.0

7.0

8.0

9.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

10

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

4.5V

0.1

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0 ID = 78.04A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91066

S-81412-Rev. A, 07-Jul-08

www.vishay.com

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