IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
1200
1000
800
ID
Top 3.6 A
5.1 A
Bottom 8.0 A
600
400
200
0
25
50
75
100
125
150
91066_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
610
600
590
580
570
560
550
540
0.0 1.0 2.0 3.0 4.0 5.0 6.0
91066_12d
IAV, Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91066
S11-1050-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000