BD720 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD720

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD720

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -2A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

VCB= -30V; IE= 0; TC= 150℃

ICEO

Collector Cutoff Current

VCE= -30V; IB=B 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -2A; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -4V

Switching Times

ton

Turn-On time

toff

Turn-Off time

IC= -1A; IB1= -IB2= -0.1A;

VCC= -20V

MIN TYP. MAX UNIT

-60

V

-1.0 V

-1.4 V

-50 μA

-1 mA

-0.1 mA

-0.2 mA

40

20

3

MHz

0.1

μs

0.4

μs

isc Website：www.iscsemi.cn

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