3DD13002B 데이터 시트보기 (PDF) - Weitron Technology

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3DD13002B

Switch Mode NPN Transistors

Weitron Technology 

Switch Mode NPN Transistors

ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current

Total Device Dissipation TA=25 C

Junction Temperature

Storage, Temperature

Symbol

VCEO

VCBO

VEBO

IC

PD

Tj

Tstg

3DD13002B

TO-92

1. EMITTER

1

2. COLLECTOR

3. BASE

2

3

Value

Unit

400

Vdc

600

Vdc

6.0

Vdc

1.0

Adc

1.0

W

150

C

-55 to +150

C

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)

Collector Cutoff Current (VCB= 600 Vdc, IE=0)

Emitter Cutoff Current (VEB= 6.0Vdc, IC=0)

Symbol

Min

Max

Unit

V(BR)CEO

400

-

Vdc

V(BR)CBO

600

-

Vdc

-

V(BR)EBO

6.0

Vdc

ICBO

IEBO

-

100

uAdc

-

100

uAdc

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