2SC3303 데이터 시트보기 (PDF) - TY Semiconductor

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2SC3303

TO-252-2L Plastic-Encapsulate NPN Transistors

TY Semiconductor 

Product specification

TO-252-2L Plastic-Encapsulate Transistors

2SC3303 TRANSISTOR (NPN)

TO-252-2L

FEATURES

z Low Collector Saturation Voltage

z High Speed Switching Time

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

100

80

7

5

1

125

150

-55~+150

1. BASE

2. COLLECTOR

3. EMITTER

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

Cob

fT

Test conditions

IC=100µA,IE=0

IC=10mA,IB=0

IE=100µA,IC=0

VCB=100V,IE=0

VEB=7V,IC=0

VCE=1V, IC=1A

VCE=1V, IC=3A

IC=3A,IB=150mA

IC=3A,IB=150mA

VCB=10V,IE=0, f=1MHz

VCE=4V,IC=1A,

Min Typ Max Unit

100

V

80

V

7

V

1

μA

1

μA

70

240

40

0.4

V

1.2

V

80

pF

20

MHz

CLASSIFICATION OF hFE(1)

RANK

RANGE

O

70-140

Y

120-240

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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