SVD7N65AT 데이터 시트보기 (PDF) - Silan Microelectronics
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SVD7N65AT Datasheet PDF : 7 Pages
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SVD7N65AT/F_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 5. Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50
0
50
100
150
200
TJ, Junction Temperature[°C]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
7. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Ciss
Coss
Crss
1
Notes:
1.VGS=0V
2. f=1MHz
10
100
VDS, Drain-Source Voltage[V]
Figure 8-2. Max. Safe Operating Area(SVD7N65AF)
102
Operation in this area
is limited by RDS(ON)
100µs
101
1ms
10ms
100
DC
10-1
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage[V]
Figure 6. On-resistance Variation vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50
0
Notes:
1. VGS=10V
2. ID=3.5A
50
100
150
200
TJ, Junction Temperature[°C]
Figure 8-1. Max. Safe Operating Area(SVD7N65AT)
102
Operation in this area is
limited by RDS(ON)
100µs
101
1ms
10ms
DC
100
10-1
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage[V]
Figure 9. Max. Drain Current vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature[°C]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.11.10
Page 4 of 7
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