SVD7N65AT 데이터 시트보기 (PDF) - Silan Microelectronics
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SVD7N65AT Datasheet PDF : 7 Pages
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SVD7N65AT/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS
Integral Reverse P-N
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=7.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr
IS=7.0A,VGS=0V,
Qrr
dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=5.64A, VDD=185V, RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
365
3.4
Max. Unit
7.0
A
28
1.4
V
--
ns
--
µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.11.10
Page 3 of 7
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