PESD5V0U5BV 데이터 시트보기 (PDF) - NXP Semiconductors.

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PESD5V0U5BV

Ultra low capacitance bidirectional fivefold ESD protection arrays

NXP Semiconductors. 

NXP Semiconductors

PESD5V0U5BF; PESD5V0U5BV

Ultra low capacitance bidirectional fivefold ESD protection arrays

4. Marking

Table 5. Marking codes

Type number

PESD5V0U5BF

PESD5V0U5BV

Marking code

B2

G7

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per device

Tj

junction temperature

-

Tamb

ambient temperature

−55

Tstg

storage temperature

−65

Max Unit

150

°C

+150 °C

+150 °C

Table 7. ESD maximum ratings

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Per diode

VESD

electrostatic discharge voltage

Conditions

IEC 61000-4-2

(contact discharge)

MIL-STD-883 (human

body model)

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Min Max Unit

[1][2]

-

-

10 kV

8

kV

PESD5V0U5BF_PESD5V0U5BV_1

Product data sheet

Rev. 01 — 15 August 2008

© NXP B.V. 2008. All rights reserved.

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