2SD974 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD974

Silicon NPN Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SD974

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Surge collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

I C(surge)

PC

Tj

Tstg

Ratings

Unit

120

V

60

V

5

V

1

A

1.5

A

4

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 120 —

voltage

Collector to emitter breakdown V(BR)CEO 60

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE

150 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Fall time

Note: 1. Pulse test

tf

—

0.4

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1.0 µA

—

0.3 V

VCB = 100 V, IE = 0

VCE = 5 V, IC = 1 A*1

IC = 1 A, IB = 0.05 A*1

1.2 MHz

—

pF

ICP = 1 A, IB1 = –IB2 = 50 mA*1

2

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