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PDTC115ET

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistors;

R1 = 100 kΩ, R2 = 100 kΩ

Product specification

PDTA115E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VCEO

collector-emitter

voltage

IO

output current (DC)

R1

bias resistor

R2

bias resistor

TYP.

−

−

100

100

MAX. UNIT

−50 V

−20 mA

−

kΩ

−

kΩ

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

PRODUCT OVERVIEW

TYPE NUMBER

PDTA115EE

PDTA115EEF

PDTA115EK

PDTA115EM

PDTA115ES

PDTA115ET

PDTA115EU

PACKAGE

PHILIPS

EIAJ

SOT416

SOT490

SOT346

SOT883

SOT54 (TO-92)

SOT23

SOT323

SC-75

SC-89

SC-59

SC-101

SC-43

−

SC-70

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

MARKING CODE NPN COMPLEMENT

5E

6B

62

F6

TA115E

*AB(1)

*7C(1)

PDTC115EE

PDTC115EEF

PDTC115EK

PDTC115EM

PDTC115ES

PDTC115ET

PDTC115EU

2004 Jul 30

2

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